Open AccessTHE BLOCKING EFFECT OF Si, GaAs AND LiNbO<sub>3</sub> SINGLE CRYSTALS
Author(s) -
Chen Chang,
Wei Cheng-Lian,
Dong Yu-Lain,
Shijie Liu,
Xia Guang-Chang,
Fan Jing-Yun,
Qiliang Wang,
Gao Zhi-Wei
Publication year - 1979
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.28.324
Subject(s) - blocking (statistics) , materials science , single crystal , blocking effect , crystal (programming language) , plane (geometry) , scattering , optics , crystallography , chemistry , physics , geometry , psychology , developmental psychology , statistics , mathematics , computer science , programming language
By making use of the back scattering method Si, GaAs and LiNbO3 Single Crystal blocking patterns were obtained and GaAs single crystal {110}, {100} and {112} plane blocking halfangle ψ1/2 values were estimated. We have found that the depth of the {110} plane blocking dip of Si slice damaged due to ion implanting becomes shallow when implantation dose increases. In order to check the experimental apparatus and the method, we have also obtained Si single crystal blocking pattern and measured the values of Si single crystal {110}, {111} and {100} crystal plane blocking halfangles