INVESTIGATION ON THE EXPONENTIAL FACTOR OF Ic-VBE CHARACTERISTICS OF TRANSISTOR AT LOW INJECTION LEVEL | Zendy

Chen Xingbi | Zendy; YI MING-GUANG | Zendy

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INVESTIGATION ON THE EXPONENTIAL FACTOR OF I<sub>c</sub>-V<sub>BE</sub> CHARACTERISTICS OF TRANSISTOR AT LOW INJECTION LEVEL

Author(s) -

Chen Xingbi,

YI MING-GUANG

Publication year - 1978

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.27.10

Subject(s) - common emitter , transistor , materials science , bipolar junction transistor , optoelectronics , exponential function , physics , atomic physics , quantum mechanics , mathematics , voltage , mathematical analysis

In this paper, we discuss the various factors affecting the Ic-VBE characteristics of a transistor in the low injection level, i.e. the factors to change n*≡ d(VBE/VT)/dlnIc to departe from 1. It is described also an accurate differential method of measuring n* for integrated transistor-pair. We show that the quasi-Fermi potential drop in emitter junction is an important factor in the explaination on the case n*< 1 observed in some transistors.

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