Open AccessINVESTIGATION ON THE EXPONENTIAL FACTOR OF I<sub>c</sub>-V<sub>BE</sub> CHARACTERISTICS OF TRANSISTOR AT LOW INJECTION LEVEL
Author(s) -
Xingbi Chen,
Moonsuk Yi
Publication year - 1978
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.27.10
Subject(s) - common emitter , transistor , materials science , bipolar junction transistor , optoelectronics , exponential function , physics , atomic physics , quantum mechanics , mathematics , voltage , mathematical analysis
In this paper, we discuss the various factors affecting the Ic-VBE characteristics of a transistor in the low injection level, i.e. the factors to change n*≡ d(VBE/VT)/dlnIc to departe from 1. It is described also an accurate differential method of measuring n* for integrated transistor-pair. We show that the quasi-Fermi potential drop in emitter junction is an important factor in the explaination on the case n*< 1 observed in some transistors.