Open AccessTE-DOPED GaAs CRYSTALS OF LOW DISLOCATION DENSITY GROWN BY THE HORIZONTAL BRIDGMAN METHOD
Author(s) -
GAAS SINGLE CRYSTAL RESEARCH GROUP
Publication year - 1976
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.25.179
Subject(s) - dislocation , materials science , doping , condensed matter physics , optoelectronics , physics , composite material
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