Open AccessMINORITY CARRIER LIFETIME IN SILICON CARBIDE BY THE ELECTROLUMINESCENCE METHOD
Author(s) -
Yui Shou-Dung,
Woo Dau-Wei,
Ton Fu-Di,
Tam Hoa-Yen
Publication year - 1966
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.22.976
Subject(s) - electroluminescence , materials science , silicon carbide , carrier lifetime , optoelectronics , silicon , reliability (semiconductor) , semiconductor , engineering physics , nanotechnology , composite material , physics , power (physics) , layer (electronics) , quantum mechanics
A method for measuring the minority carrier lifetime in silicon carbide semiconductor by the injection electroluminescence at point contacts is presented. The principles involved and measuring equipment used are described. Experiments on some important factors, such as resonance disturbance, electrical properties and electroluminescence characteristics of the point contacts, have been performed. Some feasible precautions that must be taken in order to avoid resonance disturbance and contact by-passing and to control rectification ratios are described. It is shown that in order to ensure reliability of experimental results, a knowledge of the electroluminescence characteristics of the samples should be required before measuring. By means of this method, the minority carrier lifetimes for some silicon carbide single crystals have been measured, and for most crystals these values are found to be smaller than 4.2×10-9 sec.