Open AccessTHEORY OF TUNNELLING PROCESSES IN GERMANIUM TUNNEL DIODES (Ⅰ)——IMPURITY-INDUCED CURRENT
Author(s) -
甘子钊
Publication year - 1963
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.19.25
Subject(s) - quantum tunnelling , germanium , diode , impurity , materials science , tunnel diode , current (fluid) , condensed matter physics , tunnel effect , optoelectronics , engineering physics , physics , silicon , thermodynamics , quantum mechanics