z-logo
open-access-imgOpen Access
ON CURRENT AMPLIFICATION IN POINT CONTACT TRANSISTORS
Author(s) -
Chuo Chi-Tsang,
Shiuh Gen-Twen
Publication year - 1958
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.14.317
Subject(s) - common emitter , materials science , transistor , whiskers , current (fluid) , optoelectronics , metal , condensed matter physics , electrical engineering , composite material , metallurgy , voltage , physics , engineering
For an n-type transistor, with copper and phosphor-bronze whiskers respectively for its emitter and collector, as the result of electrical forming, the emitter should have a metal-p-n structure. In the first part of this paper, the forward characteristics of such a structure is analized for the whole range of current, with special reference to the variation of the emission ratio γ with the current. The design requirement of a flat γ-Ie curve is discussed. The second part of the paper contains an analysis of current amplification of the collector. The structure assumed is a metal-p-n junction, the diffusion of phosphorus into the structure causing a high barrier for holes at the metal contact. By combining the result of the two parts, a resultant a-Ie, relation is calculated for a typical case. The main factors affecting the performance of the transistor and means of its improvement are discussed in some detail.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here