Open AccessEffect of Random Dopant Fluctuation Depending on the Ion Implantation for the Metal-Oxide-Semiconductor Field Effect Transistor
Author(s) -
Jae Hyun Park,
Tae-sig Chang,
Minsuk Kim,
Sola Woo,
Sangsig Kim
Publication year - 2017
Publication title -
jeon-gi jeonja hakoe nonmunji/jeon'gi jeonja haghoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-243X
pISSN - 1226-7244
DOI - 10.7471/ikeee.2017.21.1.96
Subject(s) - ion implantation , dopant , materials science , halo , monte carlo method , transistor , mosfet , field effect transistor , oxide , semiconductor , optoelectronics , doping , ion , chemistry , physics , metallurgy , voltage , mathematics , statistics , organic chemistry , quantum mechanics , galaxy