Open Access4H-SiC Trench-type Accumulation Super Barrier Rectifier(TASBR) for Low Forward Voltage drop
Author(s) -
Dongwoo Bae,
Kwang S. Kim
Publication year - 2017
Publication title -
jeon-gi jeonja hakoe nonmunji/jeon'gi jeonja haghoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-243X
pISSN - 1226-7244
DOI - 10.7471/ikeee.2017.21.1.73
Subject(s) - materials science , trench , schottky diode , reverse leakage current , drop (telecommunication) , voltage drop , diode , schottky barrier , peak inverse voltage , rectifier (neural networks) , optoelectronics , voltage , silicon carbide , breakdown voltage , electrical engineering , composite material , computer science , engineering , voltage regulation , dropout voltage , stochastic neural network , layer (electronics) , machine learning , recurrent neural network , artificial neural network