Open AccessA Study of SiC Trench Schottky Diode with Tilt-Implantation for Edge Termination
Author(s) -
Gil-Yong Song,
Kwangsoo Kim
Publication year - 2014
Publication title -
journal of ikeee
Language(s) - English
Resource type - Journals
eISSN - 2288-243X
pISSN - 1226-7244
DOI - 10.7471/ikeee.2014.18.2.214
Subject(s) - trench , materials science , schottky diode , breakdown voltage , optoelectronics , diode , silicon carbide , doping , voltage , reverse leakage current , insulator (electricity) , electrical engineering , composite material , engineering , layer (electronics)
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