Open AccessA 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier using the trapezoid mesa and the upper half of sidewall
Author(s) -
ByungSoo Kim,
Kwangsoo Kim
Publication year - 2013
Publication title -
journal of ikeee
Language(s) - English
Resource type - Journals
eISSN - 2288-243X
pISSN - 1226-7244
DOI - 10.7471/ikeee.2013.17.4.428
Subject(s) - trench , materials science , schottky diode , optoelectronics , rectifier (neural networks) , voltage , composite material , layer (electronics) , electrical engineering , diode , engineering , computer science , stochastic neural network , machine learning , recurrent neural network , artificial neural network
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