Open AccessSTUDI TENTANG PENGARUH DOPING TINGGI TERHADAP RESISTANSI BASIS DAN BANDGAP NARROWING PADA Si/Si1-xGex /Si HBT
Author(s) -
Achmad Fadhol
Publication year - 2010
Publication title -
makara seri teknologi
Language(s) - English
Resource type - Journals
ISSN - 1693-6698
DOI - 10.7454/mst.v7i1.138
Subject(s) - materials science , heterojunction bipolar transistor , band gap , doping , heterojunction , optoelectronics , bipolar junction transistor , common emitter , semiconductor , transistor , electrical engineering , voltage , engineering
Heterojunction is a link formed bedween two semiconductor materials and differend bandgap which has thinness under 50nm and grow the mixture of plate SiGe as bases. The link is an abrupt link or graded one. In this research learnt formulation of doping concentration influence to basis resistance and bandgap narrowing through Si/Si1-xGex/Si Heterojunction Bipolar Transistor with abrupt emitter-basis link, besides taking care to mobility and basis wide to basis resistance, it is also influence of mole fraction to bandgap power. From the result shows that doping concentration addition of NB=5.1018 cm-3 to NB=5.1020 cm-3 in basis can decrease resistance basis value about 3.6%, increase bandgap narrowing about 0.126, and increase collector current density for about 1.36 times to Ge 24%.