Open AccessCharacteristics of Zn1-xAlxO NR/ITO Composite Films Oriented Application for Optoelectronic Devices
Author(s) -
Nguyễn Đình Lâm
Publication year - 2020
Publication title -
electronics/elektronika
Language(s) - English
Resource type - Journals
eISSN - 2831-0128
pISSN - 1450-5843
DOI - 10.7251/els2024043l
Subject(s) - nanorod , composite number , photoconductivity , materials science , composite film , doping , optoelectronics , hydrothermal circulation , sheet resistance , nanotechnology , composite material , chemical engineering , layer (electronics) , engineering
The Zn1-xAlxO nanorod (NR) were grown on ITO substrates by a hydrothermal process. The influences of the Al doping concentration on the surface morphology, structural, optical, and electrical characteristics of the Zn1-xAlxO NR/ITO composite film were investigated in detail. The results indicated that characteristics of the Zn1-xAlxO NR/ITO composite film were strongly influenced by the Al doping concentration. Furthermore, the lowest vertical resistance of the Zn1-xAlxO NR can be obtained when x = 0.01 and it strongly reduces when the concentration of UV light illumination increases. This reduction follows an exponential decay with a decay rate of 4.35. This result shows good photoconductivity response of the Zn1-xAlxO NR/ITO composite film and its ability to apply for optoelectronic devices material.