Open AccessSTUDY OF THE TEMPERATURE COEFFICIENTS OF AMORPHOUS AND POLYCRYSTALLINE SILICON PHOTOVOLTAIC MODULES UNDER REAL OPERATING CONDITIONS
Author(s) -
Plamen Tsankov
Publication year - 2015
Publication title -
contemporary materials
Language(s) - English
Resource type - Journals
eISSN - 1986-8677
pISSN - 1986-8669
DOI - 10.7251/comen1502123t
Subject(s) - polycrystalline silicon , photovoltaic system , amorphous silicon , materials science , amorphous solid , monocrystalline silicon , voltage , crystallite , radiant intensity , radiation , engineering physics , optoelectronics , silicon , electrical engineering , crystalline silicon , optics , composite material , engineering , metallurgy , physics , chemistry , crystallography , layer (electronics) , thin film transistor
The paper presents the results of study of the temperature coefficients of amorphous and polycrystalline silicon photovoltaic modules under real operating conditions in 10 kWp roof installed grid connected photovoltaic power plant in Technical University of Gabrovo, Bulgaria. Computer processing and rearranging of the monitoring data are carried out to separate the measurements into groups of approximately equal amounts of solar radiation. Graphical representation of the power, voltage and current as a function of the temperature at same level of solar radiation for the two types of modules are given. Change of power, voltage and current as a function of the temperature were obtained using linear regression functions. Operating temperature coefficients of amorphous and polycrystalline photovoltaic modules based on analytic functions have been established and compared with the nominal. Analyzes and conclusions of the research were made.