Open AccessMulti-step growth of a-plane GaN epitaxial layer on r-plane sapphire substrate by HVPE method
Author(s) -
Wonjun Lee,
Mi-Seon Park,
Yeon-Suk Jang,
Won–Jae Lee,
Ju-Hyung Ha,
YoungJun Choi,
Hae-Yong Lee,
Hong-Seung Kim
Publication year - 2016
Publication title -
han-guk gyeoljeong seongjang hakoeji/han'gug gyeoljeong seongjang haghoeji
Language(s) - English
Resource type - Journals
eISSN - 2234-5078
pISSN - 1225-1429
DOI - 10.6111/jkcgct.2016.26.3.089
Subject(s) - full width at half maximum , epitaxy , sapphire , materials science , void (composites) , layer (electronics) , substrate (aquarium) , plane (geometry) , optics , optoelectronics , analytical chemistry (journal) , chemistry , geometry , nanotechnology , physics , composite material , mathematics , laser , oceanography , chromatography , geology