Open AccessEffects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate
Author(s) -
Won-Tae Yun,
YoungKwan Kim
Publication year - 2012
Publication title -
journal of the korean crystal growth and crystal technology
Language(s) - English
Resource type - Journals
eISSN - 2234-5078
pISSN - 1225-1429
DOI - 10.6111/jkcgct.2012.22.2.065
Subject(s) - materials science , silicon , diffusion barrier , crystallization , aluminium , nucleation , annealing (glass) , layer (electronics) , amorphous silicon , barrier layer , amorphous solid , substrate (aquarium) , nanocrystalline silicon , sputtering , diffusion , chemical engineering , metallurgy , composite material , crystalline silicon , crystallography , nanotechnology , thin film , chemistry , organic chemistry , oceanography , engineering , geology , physics , thermodynamics
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