Open AccessInfluence of Tunneling Current on Threshold voltage Shift by Channel Length for Asymmetric Double Gate MOSFET
Author(s) -
Hakkee Jung
Publication year - 2016
Publication title -
the journal of the korean institute of information and communication engineering
Language(s) - English
Resource type - Journals
eISSN - 2288-4165
pISSN - 2234-4772
DOI - 10.6109/jkiice.2016.20.7.1311
Subject(s) - mosfet , double gate , threshold voltage , quantum tunnelling , channel length modulation , optoelectronics , materials science , reverse short channel effect , channel (broadcasting) , gate voltage , current (fluid) , short channel effect , drain induced barrier lowering , electrical engineering , voltage , transistor , engineering
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