Open AccessDependence of Channel Doping Concentration on Drain Induced Barrier Lowering for Asymmetric Double Gate MOSFET
Author(s) -
Hyun–Kyo Jung
Publication year - 2016
Publication title -
han-guk jeongbo tongsin hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-4165
pISSN - 2234-4772
DOI - 10.6109/jkiice.2016.20.4.805
Subject(s) - mosfet , double gate , drain induced barrier lowering , doping , materials science , channel (broadcasting) , channel length modulation , optoelectronics , gate oxide , electrical engineering , transistor , voltage , engineering