Open AccessRelation of Oxide Thickness and DIBL for Asymmetric Double Gate MOSFET
Author(s) -
Hakkee Jung
Publication year - 2016
Publication title -
the journal of the korean institute of information and communication engineering
Language(s) - English
Resource type - Journals
eISSN - 2288-4165
pISSN - 2234-4772
DOI - 10.6109/jkiice.2016.20.4.799
Subject(s) - drain induced barrier lowering , gate oxide , mosfet , materials science , oxide , channel length modulation , threshold voltage , optoelectronics , time dependent gate oxide breakdown , doping , voltage , electrical engineering , transistor , engineering , metallurgy
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