Open AccessMemory window characteristics of vertical nanowire MOSFET with asymmetric source/drain for 1T-DRAM application
Author(s) -
JaeHoon Lee,
Jong Tae Park
Publication year - 2016
Publication title -
the journal of the korean institute of information and communication engineering
Language(s) - English
Resource type - Journals
eISSN - 2288-4165
pISSN - 2234-4772
DOI - 10.6109/jkiice.2016.20.4.793
Subject(s) - dram , nanowire , mosfet , window (computing) , materials science , optoelectronics , electrical engineering , transistor , computer science , engineering , voltage , operating system
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