Open AccessTunneling Current of Sub-10 nm Asymmetric Double Gate MOSFET for Channel Doping Concentration
Author(s) -
Hyun–Kyo Jung
Publication year - 2015
Publication title -
han-guk jeongbo tongsin hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-4165
pISSN - 2234-4772
DOI - 10.6109/jkiice.2015.19.7.1617
Subject(s) - mosfet , quantum tunnelling , doping , channel (broadcasting) , current (fluid) , materials science , optoelectronics , double gate , electrical engineering , transistor , voltage , engineering