Open AccessAnalysis of Tunneling Current for Bottom Gate Voltage of Sub-10 nm Asymmetric Double Gate MOSFET
Author(s) -
Hyun–Kyo Jung
Publication year - 2015
Publication title -
han-guk jeongbo tongsin hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-4165
pISSN - 2234-4772
DOI - 10.6109/jkiice.2015.19.1.163
Subject(s) - mosfet , wkb approximation , quantum tunnelling , gate oxide , channel length modulation , threshold voltage , time dependent gate oxide breakdown , materials science , condensed matter physics , electrical engineering , physics , optoelectronics , voltage , transistor , engineering , quantum mechanics