Open AccessAnalysis of Subthreshold Swing Mechanism by Device Parameter of Asymmetric Double Gate MOSFET
Author(s) -
Hyun–Kyo Jung
Publication year - 2015
Publication title -
han-guk jeongbo tongsin hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-4165
pISSN - 2234-4772
DOI - 10.6109/jkiice.2015.19.1.156
Subject(s) - mosfet , subthreshold conduction , materials science , gate oxide , threshold voltage , thermal conduction , subthreshold slope , electron , optoelectronics , electrical engineering , voltage , condensed matter physics , transistor , physics , engineering , composite material , quantum mechanics