Open AccessElectrical Characteristics of RRAM with HfO2Annealing Temperatures and Thickness
Author(s) -
JinHyung Choi,
Chong-Gun Yu,
JongTae Park
Publication year - 2014
Publication title -
the journal of the korean institute of information and communication engineering
Language(s) - English
Resource type - Journals
eISSN - 2288-4165
pISSN - 2234-4772
DOI - 10.6109/jkiice.2014.18.3.663
Subject(s) - resistive random access memory , materials science , composite material , engineering physics , optoelectronics , electrical engineering , engineering , voltage
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