Open AccessComparative Analysis of PBTI Induced Device Degradation in Junctionless and Inversion Mode Multiple-Gate MOSFET
Author(s) -
JinSu Kim,
Jin-Woo Hong,
HyeMi Kim,
Jae-Ki Lee,
Jong-Tae Park
Publication year - 2013
Publication title -
han-guk jeongbo tongsin hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-4165
pISSN - 2234-4772
DOI - 10.6109/jkiice.2013.17.1.151
Subject(s) - mosfet , materials science , optoelectronics , degradation (telecommunications) , inversion (geology) , double gate , electronic engineering , electrical engineering , engineering , transistor , geology , voltage , seismology , tectonics