Open AccessGAS-PHASE PARAMETERS AND SILICON ETCHING KINETICS IN C6F12O + O2 PLASMA
Author(s) -
Alexander Efremov,
В. Б. Бетелин,
KwangHo Kwon
Publication year - 2022
Publication title -
izvestiâ vysših učebnyh zavedenij. himiâ i himičeskaâ tehnologiâ/izvestiâ vysših učebnyh zavedenij. seriâ himiâ i himičeskaâ tehnologiâ
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.221
H-Index - 5
eISSN - 2500-3070
pISSN - 0579-2991
DOI - 10.6060/ivkkt.20226504.6534
Subject(s) - kinetics , etching (microfabrication) , plasma , silicon , materials science , plasma etching , gas phase , phase (matter) , reactive ion etching , chemistry , composite material , metallurgy , nuclear physics , physics , organic chemistry , layer (electronics) , quantum mechanics