Development and characterization of insulating layers on silicon carbide:
Author(s) -
J J Kopanski,
Donald B. Novotny
Publication year - 1989
Language(s) - English
Resource type - Reports
DOI - 10.6028/nist.ir.89-4157
Subject(s) - characterization (materials science) , silicon carbide , materials science , carbide , silicon , engineering physics , nanotechnology , optoelectronics , composite material , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom