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Development and characterization of insulating layers on silicon carbide:
Author(s) -
Joseph J. Kopanski,
Donald B. Novotny
Publication year - 1989
Language(s) - English
Resource type - Reports
DOI - 10.6028/nist.ir.89-4157
Subject(s) - characterization (materials science) , silicon carbide , materials science , carbide , silicon , engineering physics , nanotechnology , optoelectronics , composite material , engineering

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