Open AccessThe theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon
Author(s) -
Sheng S. Li
Publication year - 1979
Language(s) - English
Resource type - Reports
DOI - 10.6028/nbs.sp.400-47
Subject(s) - dopant , doping , boron , materials science , electrical resistivity and conductivity , silicon , boro , condensed matter physics , effective mass (spring–mass system) , optoelectronics , physics , electrical engineering , nuclear physics , engineering , quantum mechanics