Open AccessThe dopant density and temperature dependence of electron mobility and resistivity in N-type silicon
Author(s) -
Sheng S. Li
Publication year - 1977
Language(s) - English
Resource type - Reports
DOI - 10.6028/nbs.sp.400-33
Subject(s) - dopant , electrical resistivity and conductivity , electron , silicon , materials science , electron density , electron mobility , condensed matter physics , doping , physics , optoelectronics , nuclear physics , quantum mechanics