Open AccessSimulation Design of MHEMT Power Devices with High Breakdown Voltages
Author(s) -
Myung-Sik Son
Publication year - 2013
Publication title -
applied science and convergence technology/han'gug jin'gong hag'hoeji
Language(s) - English
Resource type - Journals
eISSN - 2288-6559
pISSN - 1225-8822
DOI - 10.5757/jkvs.2013.22.6.335
Subject(s) - breakdown voltage , optoelectronics , materials science , passivation , voltage , layer (electronics) , threshold voltage , impact ionization , saturation current , ionization , electrical engineering , chemistry , nanotechnology , ion , transistor , organic chemistry , engineering