Open AccessInfluence of InGaAs Capping Layers on the Properties of InAs/GaAs Quantum Dots
Author(s) -
Se Ra Kwon,
MeeYi Ryu,
Jin Dong Song
Publication year - 2012
Publication title -
applied science and convergence technology
Language(s) - English
Resource type - Journals
eISSN - 2288-6559
pISSN - 1225-8822
DOI - 10.5757/jkvs.2012.21.6.342
Subject(s) - quantum dot , photoluminescence , molecular beam epitaxy , materials science , optoelectronics , luminescence , wavelength , gallium arsenide , layer (electronics) , epitaxy , nanotechnology
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