Open AccessA Study on THz Generation and Detection Characteristics of InGaAs Semiconductor Epilayers
Author(s) -
D.W. Park,
J.S. Kim,
S. K. Noh,
Young-Bin Ji,
TaeIn Jeon
Publication year - 2012
Publication title -
applied science and convergence technology
Language(s) - English
Resource type - Journals
eISSN - 2288-6559
pISSN - 1225-8822
DOI - 10.5757/jkvs.2012.21.5.264
Subject(s) - terahertz radiation , materials science , optoelectronics , molecular beam epitaxy , sapphire , semiconductor , gallium arsenide , optics , laser , epitaxy , physics , nanotechnology , layer (electronics)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom