
Study of Oxygen Plasma Effects to Reduce the Contact Resistance of n-type GaN with Nitrogen Polarity
Author(s) -
Tae Yang Nam,
D.H. Kim,
W.H. Lee,
S.J. Kim,
B.G. Lee,
T.G. Kim,
Yong-Jun Jo,
Youngjoon Choi
Publication year - 2010
Publication title -
applied science and convergence technology/han'gug jin'gong hag'hoeji
Language(s) - English
Resource type - Journals
eISSN - 2288-6559
pISSN - 1225-8822
DOI - 10.5757/jkvs.2010.19.1.010
Subject(s) - ohmic contact , plasma , materials science , nitrogen , schottky barrier , contact resistance , analytical chemistry (journal) , electrode , omega , oxygen , chemistry , layer (electronics) , optoelectronics , nanotechnology , physics , organic chemistry , quantum mechanics , diode , chromatography