Open AccessOptical properties of Rare-Earth-Implanted GaN Epilayer
Author(s) -
Yongmin Kim
Publication year - 2007
Publication title -
applied science and convergence technology/han'gug jin'gong hag'hoeji
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2288-6559
pISSN - 1225-8822
DOI - 10.5757/jkvs.2007.16.3.210
Subject(s) - photoluminescence , materials science , rare earth , ion implantation , semiconductor , optoelectronics , ion , condensed matter physics , blueshift , semiconductor materials , chemistry , physics , metallurgy , organic chemistry