Open AccessEffect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction
Author(s) -
Sadia Muniza Faraz,
Syed Riaz un Nabi Jafri,
Zarreen Tajvar,
Naveed ul Hassan Alvi,
Q. Wahab,
Omer Nur
Publication year - 2021
Publication title -
elektronika ir elektrotechnika
Language(s) - English
Resource type - Journals
eISSN - 2029-5731
pISSN - 1392-1215
DOI - 10.5755/j02.eie.28723
Subject(s) - nanorod , materials science , annealing (glass) , heterojunction , photoluminescence , diode , optoelectronics , equivalent series resistance , scanning electron microscope , oxygen , silicon , analytical chemistry (journal) , nanotechnology , voltage , composite material , chemistry , electrical engineering , engineering , organic chemistry , chromatography
The effect of thermal annealing atmosphere on the electrical characteristics of Zinc oxide (ZnO) nanorods/p-Silicon (Si) diodes is investigated. ZnO nanorods are grown by low-temperature aqueous solution growth method and annealed in Nitrogen and Oxygen atmosphere. As-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characteristics of ZnO/Si heterojunction diodes are studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Improvements in rectifying behaviour, ideality factor, carrier concentration, and series resistance are observed after annealing. The ideality factor of 4.4 for as-grown improved to 3.8 and for Nitrogen and Oxygen annealed improved to 3.5 nanorods diodes. The series resistances decreased from 1.6 to 1.8 times after annealing. An overall improved behaviour is observed for oxygen annealed heterojunction diodes. The study suggests that by controlling the ZnO nanorods annealing temperatures and atmospheres the electronic and optoelectronic properties of ZnO devices can be improved.