z-logo
open-access-imgOpen Access
Formation Technology of Graded-Gap AlxGa1-xAs Solar Cell Structure Separated from GaAs Substrate
Author(s) -
Aldis Šilėnas,
A. Steikūnienė,
Gytis Steikūnas
Publication year - 2014
Publication title -
materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.293
H-Index - 22
eISSN - 2029-7289
pISSN - 1392-1320
DOI - 10.5755/j01.ms.20.2.6327
Subject(s) - substrate (aquarium) , epitaxy , materials science , optoelectronics , solar cell , layer (electronics) , cell structure , isotropic etching , etching (microfabrication) , gallium arsenide , x ray absorption spectroscopy , optics , nanotechnology , physics , oceanography , geology , biological system , biology , absorption spectroscopy

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom