Open AccessPeculiarities of Temperature Dependence of Detected Voltage by GaAs/Al0.25Ga0.75As Heterojunction Microwave Diode Near Interwalley Crossover
Author(s) -
Algirdas Sužiedėlis,
S. Ašmontas,
Jonas Gradauskas,
Viktorija Nargelienė,
Aurimas Čerškus,
Andžej Lučun,
T. Anbinderis,
I. Papsujeva,
A. Narkūnas,
Benas Kundrotas,
R. Rinkevičienė
Publication year - 2014
Publication title -
materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.293
H-Index - 22
eISSN - 2029-7289
pISSN - 1392-1320
DOI - 10.5755/j01.ms.20.2.6319
Subject(s) - heterojunction , diode , optoelectronics , microwave , materials science , voltage , planar , heterojunction bipolar transistor , electrical engineering , physics , transistor , bipolar junction transistor , computer science , engineering , computer graphics (images) , quantum mechanics
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