Open AccessSilicon on isolator ribbon field-effect nanotransistors for high-sensitivity low-power biosensor
Author(s) -
Nikolay Masalsky
Publication year - 2022
Publication title -
journal of engineering and technological sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.202
H-Index - 14
eISSN - 2338-5502
pISSN - 2337-5779
DOI - 10.5614/j.eng.technol.sci.2022.54.2.14
Subject(s) - materials science , cmos , transistor , optoelectronics , sensitivity (control systems) , silicon on insulator , field effect transistor , planar , substrate (aquarium) , silicon , isolator , electronic engineering , electrical engineering , voltage , engineering , computer science , oceanography , computer graphics (images) , geology
Silicon nanowire field-effect transistors are discussed as biological sensors due to their excellent sensitivity due to the large surface-to-volume ratio and high selectivity with respect to a large number of analytes. A miniature sensor based on a long-channel fin field-effect transistor as a surface charge detector is being investigated. The three-gate configuration offers undeniable advantages over planar devices, since the edges are about a hundred nanometers wide and are characterized by increased conductivity, which leads to higher sensitivity. The characteristics of the transistor are optimized using 3D modeling performed by the computer-aided design software package TCAD, depending on the topological parameters of the transistor and the level of control voltages. Based on the obtained simulation results, a chip was manufactured on a SOI substrate based on self-aligning CMOS-compatible technological processes from top to bottom. It is established that thin structures with a reduced level of doping and low supply power have promising electrical characteristics for an effective approach to scaling a high-resolution pH sensor, which is of particular interest to integrated pH bioanalytics based on CMOS technology.