Open AccessA Comparison of Zinc and Carbon Doped on the Atomic Interdiffusion of InGaAs/AlGaAs Quantum Wells Laser Structures After Annealing
Author(s) -
Paulus Lobo Gareso
Publication year - 2016
Publication title -
kontribusi fisika indonesia
Language(s) - English
Resource type - Journals
ISSN - 0854-6878
DOI - 10.5614/itb.ijp.2009.20.2.1
Subject(s) - photoluminescence , annealing (glass) , materials science , doping , analytical chemistry (journal) , zinc , photocurrent , quantum well , optoelectronics , laser , chemistry , metallurgy , optics , physics , chromatography
We have compared a zinc and a carbon doped on the atomic interdiffusion of InGaAs/AlGaAs after annealing using Electrochemical capacitance voltage (EC-V), X-ray diffraction and photoluminescence (PL) measurements. Electrochemical capacitance voltage measurements revealed that the carrier concentration in the Zn-doped p++GaAs contact layers decreased after annealing at 900oC for 60 sec, indicating that some of the Zn acceptors were passivated or outdiffused from the surface. In contrast to the C-doped samples, an increase of carrier concentration was observed after annealing. X-ray rocking curve confirmed this result where the amount of lattice contraction increase after annealing which is attributed to the presence of the substitutional carbon CAs. Photoluminescence results showed that a large energy shift was observed in the Zn-doped samples compare with C- doped samples. Photoluminescence measurements after etching to various depth showed similar luminescence defects in both Zn- and C-doped samples. Photocurrent measurements showed the quality of quantum well was improve after annealing in C-doped samples due to activation of carbon doped.