Open AccessComparison of Electron Direct Transmittance and Tunneling Time of Si (100)/HfO2/Si (100) and Si (110)/HfO2/Si (110) Structures with Ultra-thin Trapezoidal Barrier
Author(s) -
Fatimah A. Noor,
Mikrajuddin Abdullah,
Sukirno Sukirno,
Khairurrijal Khairurrijal
Publication year - 2016
Publication title -
kontribusi fisika indonesia
Language(s) - English
Resource type - Journals
ISSN - 0854-6878
DOI - 10.5614/itb.ijp.2007.18.2.1
Subject(s) - quantum tunnelling , isotropy , electron , transmittance , anisotropy , materials science , heterojunction , condensed matter physics , optics , optoelectronics , physics , quantum mechanics
An analytical expression of electron direct transmittance and tunneling time through a nanometer-thick trapezoidal potential barrier have been derived by using a phase-time method with Airy wavefunction solution. The expression is applied to Si(100)/HfO2/Si(100) (isotropic) and Si(110)/HfO2/Si(110) (anisotropic) structures calculated under the consideration of barrier width, incident energy, incident angle, and bias voltage. The calculated results are discussed and comparisons between the isotropic and anisotropic heterostructures are discussed.