Open AccessEffective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs
Author(s) -
Hyun-Seop Kim,
Seo-Weon Heo,
HoYoung Cha
Publication year - 2016
Publication title -
jsts journal of semiconductor technology and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.156
H-Index - 19
eISSN - 2233-4866
pISSN - 1598-1657
DOI - 10.5573/jsts.2016.16.6.867
Subject(s) - materials science , optoelectronics , electric field , heterojunction , threshold voltage , transistor , channel (broadcasting) , electron mobility , oxide , field effect , voltage , electrical engineering , physics , engineering , quantum mechanics , metallurgy
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