Open AccessIMPROVEMENT OF THE PASSIVATION PROPERTIES OF SiO<sub>2</sub> FILMS, GROWN BY THE METHOD OF RAPID THERMAL ANNEALING, AFTER CHEMICAL RCA TREATMENT
Author(s) -
K. Kh. Nussupov,
Н. Б. Бейсенханов,
Assanali Sultanov,
I. E. Tyschenko,
A. Zh. Kusainova,
Z. K. BUGYBAI,
K. M. YSKAK
Publication year - 2022
Publication title -
ķazaķstan-britan tehnikalyķ universitetìnìņ habaršysy
Language(s) - English
Resource type - Journals
eISSN - 2959-8109
pISSN - 1998-6688
DOI - 10.55452/1998-6688-2022-19-2-29-38
Subject(s) - passivation , wafer , materials science , silicon , monocrystalline silicon , annealing (glass) , silicon dioxide , crystalline silicon , thermal oxidation , analytical chemistry (journal) , optoelectronics , layer (electronics) , nanotechnology , composite material , chemistry , chromatography