Open AccessMulticomponent Solid Solutions (ZnSe)1-x-y(Si2)x(GaP)y
Author(s) -
А. С. Саидов,
N Usmonov Sn.,
U. Kh. Rakhmonov,
A. Kurmantayev,
A. N. Bahtybayev
Publication year - 2012
Publication title -
journal of materials science research
Language(s) - English
Resource type - Journals
eISSN - 1927-0593
pISSN - 1927-0585
DOI - 10.5539/jmsr.v1n2p150
Subject(s) - materials science , solid solution , photoluminescence , luminescence , impurity , band gap , epitaxy , heterojunction , analytical chemistry (journal) , tin , crystallography , optoelectronics , nanotechnology , layer (electronics) , chemistry , metallurgy , organic chemistry , chromatography
Epitaxy layers of solid solution (ZnSe)1-x-y(Si2)x(GaP)y (0 £ ? £ 0.03, 0 £ y £ 0.09) were grown up from the limited volume of tin solution-melting by method of liquid phase epitaxy. Profiles of distribution of components Ga, P, Zn, Se and Si in grown up epitaxy layers are defined. In spectrum of the photoluminescence of surface of the solid solution at 5 K 2 peaks of radiation are found out. They are probably caused by compounds Si2 (1.67 eV) and GaP (2.21 eV). It has been shown that covalent coupling Si-Si and Ga-P cause impurity levels laying in the forbidden zone of the solid solution (ZnSe)1-x-y(Si2)x(GaP)y. Isotype heterojunction n-GaP-n+-(ZnSe)1-x-y(Si2)x(GaP)y (0 £ ? £ 0.03, 0 £ y £ 0.09) (without luminophor) gives red and yellow luminescence which is caused by electronic transitions from Si-Si and from Ga-P, taking place in tetrahedron lattice of the solid solution