Open AccessWideband Class-J Power Amplifier Design Using Internal Matched GaN HEMT
Author(s) -
Erle C.H. Lim,
Chan-Se Yoo,
Do-Gueong Kim,
Jung-Gyu Sun,
Dong-Hwan Yoon,
Seok-Hui Yoon,
Young-Chul Rhee
Publication year - 2017
Publication title -
han'gug jeonja'pa haghoe nonmunji/the journal of korean institute of electromagnetic engineering and science
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2288-226X
pISSN - 1226-3133
DOI - 10.5515/kjkiees.2017.28.2.105
Subject(s) - wideband , amplifier , stub (electronics) , electronic engineering , rf power amplifier , impedance matching , electrical engineering , high electron mobility transistor , power added efficiency , engineering , bandwidth (computing) , computer science , electrical impedance , telecommunications , transistor , voltage