Open AccessA 2.65 GHz Doherty Power Amplifier Using Internally-Matched GaN-HEMT
Author(s) -
강현욱,
이휘섭,
임원섭,
김민석,
이형준,
윤정상,
이동우,
양영구
Publication year - 2016
Publication title -
han'gug jeonja'pa haghoe nonmunji/the journal of korean institute of electromagnetic engineering and science
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2288-226X
pISSN - 1226-3133
DOI - 10.5515/kjkiees.2016.27.3.269
Subject(s) - amplifier , high electron mobility transistor , dbc , doherty amplifier , electrical engineering , power (physics) , transistor , impedance matching , materials science , dbm , electrical impedance , engineering , voltage , rf power amplifier , physics , phase noise , cmos , quantum mechanics