Open Access0.25 μm AlGaN/GaN HEMT Devices and 9 GHz Power Amplifier
Author(s) -
Dong Min Kang,
Byung Gil Min,
Jongmin Lee,
Hyung-Sup Yoon,
Sung-Il Kim,
Ho−Kyun Ahn,
DongYoung Kim,
Hae-Cheon Kim,
JongWon Lim,
Eun Soo Nam
Publication year - 2016
Publication title -
han'gug jeonja'pa haghoe nonmunji/the journal of korean institute of electromagnetic engineering and science
Language(s) - English
Resource type - Journals
eISSN - 2288-226X
pISSN - 1226-3133
DOI - 10.5515/kjkiees.2016.27.1.76
Subject(s) - high electron mobility transistor , amplifier , materials science , optoelectronics , transistor , w band , gallium nitride , electrical engineering , engineering , voltage , nanotechnology , layer (electronics) , cmos