Open AccessS-Band Internally-Matched High Efficiency and High Power Amplifier Using GaN HEMT Die
Author(s) -
Sang-Hoon Kim,
JinJoo Choi,
Gil-Wong Choi,
Hyoung-Joo Kim
Publication year - 2015
Publication title -
han'gug jeonja'pa haghoe nonmunji/the journal of korean institute of electromagnetic engineering and science
Language(s) - English
Resource type - Journals
eISSN - 2288-226X
pISSN - 1226-3133
DOI - 10.5515/kjkiees.2015.26.6.540
Subject(s) - high electron mobility transistor , amplifier , gallium nitride , materials science , optoelectronics , transistor , power added efficiency , electrical engineering , monolithic microwave integrated circuit , die (integrated circuit) , rf power amplifier , engineering , voltage , nanotechnology , layer (electronics) , cmos