
A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating
Author(s) -
Keigo Nakatani,
Toshio Ishizaki
Publication year - 2015
Publication title -
journal of the korean institute of electromagnetic engineering and science
Language(s) - English
Resource type - Journals
eISSN - 2234-8409
pISSN - 2234-8395
DOI - 10.5515/jkiees.2015.15.2.82
Subject(s) - amplifier , microwave , materials science , rf power amplifier , power added efficiency , electrical engineering , high electron mobility transistor , harmonic , cavity magnetron , optoelectronics , linear amplifier , power (physics) , voltage , engineering , transistor , physics , acoustics , telecommunications , cmos , thin film , quantum mechanics , sputtering , nanotechnology