Open AccessInfluence of vacancies on the distribution of atomic steps on the silicon (111) surface
Author(s) -
Sergey S. Kosolobov,
А. В. Латышев
Publication year - 2007
Publication title -
vestnik novosibirskogo gosudarstvennogo universiteta. seriâ: fizika
Language(s) - English
Resource type - Journals
ISSN - 1818-7994
DOI - 10.54238/1818-7994-2007-2-2-40-50
Subject(s) - silicon , surface (topology) , materials science , distribution (mathematics) , chemical physics , chemistry , optoelectronics , geometry , mathematics , mathematical analysis