Open AccessEffects of Doping Concentration on Device Performance of GaN-based Nano-regime MOSFETs
Author(s) -
Iktiham Bin Taher,
Md. Tanvir Hasan
Publication year - 2017
Publication title -
the aiub journal of science and engineering
Language(s) - English
Resource type - Journals
eISSN - 2520-4890
pISSN - 1608-3679
DOI - 10.53799/ajse.v16i1.34
Subject(s) - materials science , optoelectronics , drain induced barrier lowering , doping , gallium nitride , subthreshold swing , threshold voltage , subthreshold conduction , transistor , subthreshold slope , mosfet , nanoscopic scale , voltage , electrical engineering , nanotechnology , layer (electronics) , engineering
Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are promising for switching device applications. The doping of n- and p-layers is varied to evaluate the figure of merits of proposed devices with a gate length of 10 nm. Devices are switched from OFF-state (gate voltage, VGS = 0 V) to ON-state (VGS = 1 V) for a fixed drain voltage, VDS = 0.75 V. The device with channel doping of 1×1016 cm-3 and source/drain (S/D) of 1×1020 cm-3 shows good device performance due to better control of gate over channel. The ON-current (ION), OFF-current (IOFF), subthreshold swing (SS), drain induce barrier lowering (DIBL), and delay time are found to be 6.85 mA/μm, 5.15×10-7 A/μm, 87.8 mV/decade, and 100.5 mV/V, 0.035 ps, respectively. These results indicate that GaN-based MOSFETs are very suitable for the logic switching application in nanoscale regime.