Open AccessElectrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope
Author(s) -
Sung Yoon Kim,
Jae Hwa Seo,
Young Jun Yoon,
Jin Su Kim,
Seongjae Cho,
JungHee Lee,
In Man Kang
Publication year - 2015
Publication title -
journal of electrical engineering and technology/journal of electrical engineering and technology
Language(s) - English
Resource type - Journals
eISSN - 2093-7423
pISSN - 1975-0102
DOI - 10.5370/jeet.2015.10.3.1131
Subject(s) - materials science , gallium nitride , optoelectronics , planar , mosfet , technology cad , electronic engineering , electrical engineering , engineering , voltage , transistor , nanotechnology , computer science , computer graphics (images) , layer (electronics) , engineering drawing , cad
Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar devices because of its area effectiveness. However, it is challenging to obtain a completely upright vertical structure due to inevitable sidewall slope in anisotropic etching of GaN. In this letter, we design and analyze the enhancement-mode n-channel vertical GaN MOSFET with variation of sidewall gate angle by two-dimensional (2D) technology computer-aided design (TCAD) simulations. As the sidewall slope gets closer to right angle, the device performances are improved since a gradual slope provides a leakage current path through the bulk region.